Room temperature coherence properties and ¹⁴N nuclear spin readout of NV centers in 4H-SiC

We have investigated the room temperature spin coherence properties of the axial NVkk center in 4H-SiC by pulsed high-frequency electron spin resonance and electron-nuclear double resonance techniques. Our results show a remarkable phase coherence time (T-Coherence) of 25.3 mu s at room temperature for ensembles of NV centers. We demonstrate precise control over NV defect spins through Rabi oscillations, which exhibit a linear response to microwave power. Additionally, the demonstrated room temperature readout of the intrinsic N-14 nuclear spin (I = 1) underscores its potential as a robust nuclear spin memory resource, further positioning NV defects in 4H-SiC as an advanced platform for implementing cutting-edge quantum technologies in semiconductor systems.