Growth and characterization of epitaxial films based on semimagnetic Pb_1-xEu_xTe solid solutions on various substrates

This paper presents the results of a study of the growth and structure properties of Pb1-xEuxTe, (x=0.05) epitaxial films with 0.5-1 mu m thickness, grown on BaF2 and SiO2 substrates oriented in the (111) direction, by the molecular beam condensation method in a vacuum of 10(-4) Pa with the use of an additional compensating source of Te vapor during the growth process. The optimal conditions for obtaining structurally perfect (W-1/2=90-100") epitaxial films were established: T-sub=573-623K; T-Te=410K; nu(c)= 8-9 angstrom/s. It was determined that conductivity inversion occurs at the temperature of the compensating source 410K.