Remote imprinting of moir lattices

Two-dimensional moire materials are formed by overlaying two layered crystals with small differences in orientation or/and lattice constant, where their direct coupling generates moire potentials. Moire materials have emerged as a platform for the discovery of new physics and device concepts, but while moire materials are highly tunable, once formed, moire lattices cannot be easily altered. Here we demonstrate the electrostatic imprinting of moire lattices onto a target monolayer semiconductor. The moire potential-created by a lattice of electrons that is supported by a Mott insulator state in a remote MoSe2/WS2 moire bilayer-imprints a moire potential that generates flat bands and correlated insulating states in the target monolayer and can be turned on/off by gate tuning the doping density of the moire bilayer. Additionally, we studied the interplay between the electrostatic and structural relaxation contributions to moire imprinting. Our results demonstrate a pathway towards gate control of moire lattices. The authors imprint a moire potential on a remote monolayer semiconductor through the moire potential created in a remote MoSe2/WS2 moire bilayer. The imprinted moire potential enables gate-controlled generation of flat bands and correlated insulating states in the targeted monolayer.