Effect of annealing temperature on the energy storage performance of PbZr0.52Ti0.48O3/PbZrO3 composite films

PbZrO3 (PZ) antiferroelectric films and PbZr0 & sdot;52Ti0 & sdot;48O3 (PZT) ferroelectric films are widely researched due to their significance as representative film materials. The article investigates the structure-performance relationship of PZT/PZ composite films with different PZ and PZT phase structures. PZT/PZ films with different PZ and PZT phase structures were fabricated on SiO2/Si substrates using the sol-gel method. The electrical properties of prepared films annealed at different temperatures were characterized and were compared at different annealing temperatures (550 degrees C, 600 degrees C, 620 degrees C, 650 degrees C). At the annealing temperature of 600 degrees C, it was observed that the presence of pyrochlore and perovskite phases in PZ makes the composite films high breakdown field strength (BDS) and moderate polarization (Pm), enhancing the energy storage properties. However, when the annealing temperature exceeds 600 degrees C, it would have the opposite effect on the BDS and Pm due to the increased pyrochlore and perovskite phase. The above analysis indicates that regulating the phase structure of PZ and PZT films is the effective approach to obtain high energy storage density capacitors.