Optimizing the performance of (Sb_0.2Sn_0.8)_0.5(S_0.9Se_{0 .1})_0.5 crystal-based self-powered photodetectors

The need to develop electronic systems capable of functioning without an external power source is an utmost priority, especially in the pursuit of self-powered photodetection. Through the direct vapor transport (DVT) method, we have synthesized a single crystal of the quaternary compound (Sb0.2Sn0.8)0.5(S0.9Se0.1)0.5 for selfdriven photodetectors. The crystal's elemental composition was ascertained via energy-dispersive X-ray analysis (EDX), along with Field emission scanning electron microscopy (FESEM) provided insight into its surface morphology. The orthorhombic crystal system of the grown sample has been validated by a powder X-ray diffractometer (XRD). The regular spot pattern of SAED and the well-defined sharp peaks observed in the XRD graph collectively indicate the crystal's pronounced crystalline quality. The lattice parameters closely resemble the reported data. A UV-VIS-NIR spectrometer was utilized to deduce a direct optical band gap of 1.49 eV. Raman spectroscopy was used to examine different phonon modes. We analyzed its pulsed photo response by subjecting the grown crystal to different wavelengths and varying intensities of white light at self-biased mode and by applying 1 V bias. Our analysis enabled us to determine favourable photodetection parameters.