Interface Potential Estimation on VO2/Si Heterojunction by Terahertz Emission Spectroscopy with Temperature Variation
2023 48TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, IRMMW-THZ(2023)
Abstract
Terahertz emission spectroscopy has shown a lot of advantages in estimating the electric properties of semiconductor devices. In this research, we aim to observe the dynamic interface potential variation from VO2/Si heterojunction across the phase transition temperature by terahertz emission spectroscopy and attempt to evaluate the work function of VO2 film in different phase conditions.
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