Effect of Fin-width on the DC Performance of AlGaN/GaN Fin-HEMTs

The effects of fin-width on the DC performance of AlGaN/GaN Fin-HEMTs is investigated in this work, demonstrating significant improvement in gate control as the sub-threshold swing is suppressed from 802.15 to 72.53 mV/decade and the maximum trans-conductance has increased from 205.728 to 464.247 mS/mm by reducing the fin-width. The threshold voltage of Fin-HEMTs also shifted towards the positive side with decreasing fin-width. In addition, it has been found that the on current obtained is high compared to planar devices and the high on-off current ratio indicates superior DC performance for the Fin-HEMT structure.