650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk

A 650-V GaN-on-Si power integration platform based on virtual-body p-GaN gate HEMT (VB-HEMT) is demonstrated for monolithically integrated half-bridge circuit. The platform adopts a standard low-resistivity bulk Si substrate, enabling epitaxial growth of thick GaN films using the established GaN-on-Si technology, thus boosting the GaN-on-Si power IC platform to 650 V level. The VB-HEMT features a virtual body at the interface between GaN channel layer and buried AlGaN layer. The holes injected from the p-GaN gate accumulate and spread along the virtual body, providing an effective screening against substructure-induced crosstalk up to 400 V. Furthermore, the dynamic R ON of the VB-HEMT is appreciably reduced.