IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs

Bong Ho Kim,Seong Kwang Kim,Song-hyeon Kuk,Yoon-Je Suh, Jaeyong Jeong,Joon Pyo Kim,Dae-Myeong Geum,Sanghyeon Kim

2023 International Electron Devices Meeting (IEDM)（2023）

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摘要

We investigated the effects of interfacial layer scavenging on the performance and reliability of HZO-based ferroelectric field-effect transistors (FeFETs). IL scavenging effectively reduced operating voltage and improved endurance/retention characteristics. The sub-loop operation and recovery strategies are proposed to extend the endurance characteristics of FeFETs. The results provide insights into the degradation/recovery mechanisms of gate stacks in FeFETs and highlight the importance of recovery speed and controlled IL.

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关键词

Recovery Strategies,Ferroelectric Field-effect Transistor,Open Voltage,Scavenging Effect,Gate Stack,Cycling,Dielectric Constant,Si Substrate,Charge Trapping,Electron Trapping,Retention Characteristics,Ferroelectric Switching

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