14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM

We demonstrate a novel 14nm magnetic tunnel junction (MTJ) for achieving high-retention and high-speed writing simultaneously in 1Z (15-14) nm Spin-Transfer-Torque (STT) MRAM. We developed a new Accelerated STT-switching and High-Retention MTJ (AccelHR-MTJ) using storage layer (SL) composed of high-retention doped Co-Pt alloy layer on CoFeB switching accelerating layer. Excellent performances such as high-retention of >10 years at 90°C and high-speed writing down to 5ns were demonstrated in our 14nm AccelHR-MTJ based on the design concept established by micromagnetic simulations. This MTJ technology enables high-density, high-speed, and low-cost 1Znm STT-MRAM toward storage class memory (SCM) applications.