On The Effect Of Optical Power On Quantum Dot HEMT Transistor.

We have investigated the DC Characteristics of AlGaAs/GaAS High electron Mobility Transistor in which a layer of InAs self-assembled Quantum Dots was inserted below the Two-Dimensional Electron Gas (2DEG) channel. A plateau and hysteresis loops appeared in the current-voltage characteristics at low Temperatures in dark and illumination conditions which led to an increase of Negative Differential Conductance with the rise of optical power. Electrical Measurements showed that the plateau and hysteresis disappeared at a Critical Temperature value of 150 K. Optical memory effect was demonstrated for the studied sample which could be useful for low-Temperature Electronics (e.g Space Application).