Surface Modification of Silicon Nanowires with Siloxane Molecules for High-Performance Hydrovoltaic Devices

Hydrovoltaic devices (HDs) based on silicon nanowires (SiNWs) have attracted significant attention due to their potential of high output power and good compatibility with Si-based photovoltaic devices for integrated power systems. However, it remains a major challenge to further improve the output performance of SiNW HDs for practical applications. Here, a new strategy to modify the surface of SiNWs with siloxane molecules is proposed to improve the output performance of the SiNW HDs. After modification, both the open-circuit voltage (V-oc) and short-circuit current density (J(sc)) of n-type SiNW HDs can be improved by approximately 30%, while the output power density can be greatly increased by over 200%. With siloxane modification, Si-OH groups on the surface of typical SiNWs are replaced by Si-O-Si chemical bonds that have a weaker electron-withdrawing capability. More free electrons in n-type SiNWs are liberated from surface bound states and participate in directed flow induced by water evaporation, thereby improving the output performance of HDs. The improved performance is significant for system integration applications as it reduces the number of required devices. Three siloxane-modified SiNW HDs in series are able to drive a 2 V light-emitting diode (LED), whereas four unmodified devices in series are initially needed for the same task. This work provides a simple yet effective strategy for surface modification to improve the output performance of SiNW HDs. Further research into the effect of different surface modifications on the performance of SiNW HDs will greatly promote their performance enhancement and practical applications.