Design of PSFB Converter with GaN Devices for PPU Anode Module

GaN devices were used to build a power processing unit anode power based phase-shift full bridge (PSFB) converter. Both the power density and power efficiency are increased when GaN devices are used in place of Si devices. GaN devices' smaller output capacitors allow the PSFB converter to achieve zero voltage switching with significantly less dead time under control of a digital controller, increasing switch frequency to 200 kHz and reducing the need for magnetic devices. The operating principles, analyses, design factors, and experimental findings are all discussed in this study.