Mott resistive switching initiated by topological defects
arxiv(2024)
摘要
Resistive switching is the fundamental process that triggers the sudden
change of the electrical properties in solid-state devices under the action of
intense electric fields. Despite its relevance for information processing,
ultrafast electronics, neuromorphic devices, resistive memories and
brain-inspired computation, the nature of the local stochastic fluctuations
that drive the formation of metallic nuclei out of the insulating state has
remained hidden. Here, using operando X-ray nano-imaging, we have captured the
early-stages of resistive switching in a V2O3-based device under working
conditions. V2O3 is a paradigmatic Mott material, which undergoes a first-order
metal-to-insulator transition coupled to a lattice transformation that breaks
the threefold rotational symmetry of the rhombohedral metal phase. We reveal a
new class of volatile electronic switching triggered by nanoscale topological
defects of the lattice order parameter of the insulating phase. Our results
pave the way to the use of strain engineering approaches to manipulate
topological defects and achieve the full control of the electronic Mott
switching. The concept of topology-driven reversible electronic transition is
of interest for a broad class of quantum materials, comprising transition metal
oxides, chalcogenides and kagome metals, that exhibit first-order electronic
transitions coupled to a symmetry-breaking order.
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