Ionizing Radiation Hardness Characterization of GaN HEMTs Depends on the Radiation Source

A.C.V. Bôas,S.G. Alberton,N.H. Medina,V.A. P. Aguiar, M.A.A. Melo,R.B.B. Santos,R.C. Giacomini, T. V. Cavalcante,L.E. Seixas,S. Finco,F.R. Palomo,M.A. Guazzelli

2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2022）

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摘要

This work presents a radiation effects comparison in a COTS GaN HEMT observed when this transistor is irradiated with a 10 keV X-ray and a 1.25 MeV γ-ray electromagnetic radiation. The results indicate that these two sources may affect this device differently.

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关键词

GaN HEMT,gamma-ray,Reliability,TID,X-ray

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