Three-dimensional Simulation Methodology for Ionizing Radiation Effect in Ultra-scaled SOI FinFETs

Yichao Sun,Peng Lu,Xu Zhang,Junjun Zhang,Can Yang,Qingzhu Zhang,Zhengsheng Han,Bo Li

2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2022）

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摘要

This work proposes a 3D TID effect simulation methodology for sub-22-nm node SOI FinFETs. The method captures the S/D-induced non-uniform charge generation under irradiation, providing physical insights into the TID effect’s mechanism in ultra-scaled transistors.

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关键词

SOI FinFET,Total ionizing dose (TID),Sentaurus TCAD,3D simulation methodology

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