Tunable high-temperature tunneling magnetoresistance in all-van der Waals antiferromagnet/semiconductor/ferromagnet junctions
Advanced Functional Materials(2024)
摘要
Magnetic tunnel junctions (MTJs) have been widely applied in spintronic
devices for efficient spin detection through the imbalance of spin polarization
at the Fermi level. The van der Waals (vdW) nature of two-dimensional (2D)
magnets with atomic-scale flat surfaces and negligible surface roughness
greatly facilitates the development of MTJs, yet is only restricted to
ferromagnets. Here, we report A-type antiferromagnetism in 2D vdW
single-crystal (Fe0.8Co0.2)3GaTe2 with TN 203 K in bulk and 185 K in 9-nm
nanosheets. The metallic nature and out-of-plane magnetic anisotropy make it a
suitable candidate for MTJ electrodes. By constructing heterostructures based
on (Fe0.8Co0.2)3GaTe2/WSe2/Fe3GaTe2, we obtain a large tunneling
magnetoresistance (TMR) ratio of 180
near-room temperature 280 K. Moreover, the TMR is tunable by the electric field
down to 1 mV, implying the potential in energy-efficient spintronic devices.
Our work provides new opportunities for 2D antiferromagnetic spintronics and
quantum devices.
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