Ferroelectric properties of vanadium substituted four-layer Aurivillius compound Bi₅Fe_1.5V_0.5Ti₂O₁₅ thin films

We report the preparation and characterization of vanadium substituted four-layer Aurivillius compound Bi5Fe1.5V0.5Ti2O15 using spin coating method. Ferroelectricity in the prepared films are confirmed from the well saturated polarization vs electric field (P-E) loops having remnant polarization (2 P-r) around 12.94 mu C/cm(2) at room temperature. In addition, low temperature P-E measurements show a decrease in P-max and 2 P-r, which is attributed to the stabilization of defect dipole complexes and domain pinning, as seen in bismuth-based ferroelectrics. Additionally, this decrease in polarization is accompanied by an increase in imprint, confirming the presence of defect dipoles manifested as internal fields.