Coexistence of resistive capacitive and virtual inductive effects in memristive devices
arxiv(2024)
摘要
This paper examines the coexistence of resistive, capacitive, and inertia
(virtual inductive) effects in memristive devices, focusing on ReRAM devices,
specifically the interface-type or non-filamentary analog switching devices. A
physics-inspired compact model is used to effectively capture the underlying
mechanisms governing resistive switching in NbO_ x and BiFeO_3 based
on memristive devices. The model includes different capacitive components in
metal-insulator-metal structures to simulate capacitive effects. Drift and
diffusion of particles are modeled and correlated with particles' inertia
within the system. Using the model, we obtain the I-V characteristics of both
devices that show good agreement with experimental findings and the
corresponding C-V characteristics. This model also replicates observed non-zero
crossing hysteresis in perovskite-based devices. Additionally, the study
examines how the reactance of the device changes in response to variations in
the device area and length.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要