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モバイルSoC応用のための0.027μm~2高密度6T SRAMセルを用いた4~日発生FinFETトランジスタを特徴とする7nm CMOSプラットフォーム技術【Powered by NICT】

Wu Shien-Yang, C Y Lin,M C Chiang, J,J Y Cheng,S H Yang,C H Tsai, P N Chen,T Miyashita,C H Chang,V S Chang,K H Pan, J H Chen, Y S Mor, K T Lai, C S Liang, Hung-Ming Chen, S Y Chang, C J Lin,C H Hsieh,R F Tsui,C H Yao, C,R Chen, C H Lee,H J Lin,C W Chang, K W Chen,M H Tsai,K S Chen,Yu‐Pin Ku,S M Jang

IEEE Conference Proceedings（2016）

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