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Phase Transformation on HZO Ferroelectric Layer in Ferroelectric Random-Access Memory Induced by X-Ray Irradiation

Chung-Wei Wu,Po-Hsun Chen, Chang,Yung-Fang Tan,Shih-Kai Lin,Yu-Hsuan Yeh,Yong-Ci Zhang,Hsin-Ni Lin,Kai-Chun Chang,Chien-Hung Yeh,Simon Sze

SEMICONDUCTOR SCIENCE AND TECHNOLOGY（2024）

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Key words
HZO,ferroelectric random-access memory (FeRAM),non-volatile memory,x-ray,radiation
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