Structural, thermal, optical, magnetic and electrical properties of Fe doped Ba_0.77Ca_0.23TiO₃ perovskite

The most known ferroelectric ceramic material is Barium Titanate (BaTiO3), which is frequently used in actuators, capacitors, and memory devices. The ferroelectric properties of Barium Titanate were improved by doping a small amount of other dopants. Choosing a material with high ferroelectric, piezoelectric, dielectric, and magnetic constants, low dielectric loss, and high electrical resistivity is necessary. In order to achieve the purpose, the suggested sample is formed as Ba0.77Ca0.23Ti1-xFexO3, where x is equivalent to 0.0, 0.05, 0.15, and 0.20. We doped iron (Fe), replacing titanium, and the percentage of calcium was fixed. The composition was synthesized by the conventional solid-state reaction (SSR) method. Effects of ferrite contents (x) on the structural, thermal, optical, dielectric, magnetic, and electrical properties were thoroughly investigated. The structural properties and phase identification were studied by powder X-ray diffraction (XRD), confirming the formation of the cubic crystal structure of perovskite samples. While increasing Fe contents (x), the lattice parameter of the samples increases slightly but dramatically decreases for x = 0.20. Differential Scanning Calorimeter (DSC) results that the specific heat capacity is highest at 1100 C. Fourier -transform infrared spectroscopy (FTIR) analyses confirmed the metal -oxygen corresponding bonds at 370 cm(-1) and 530 cm(-1) in the perovskite structure. The bandgap (Eg) values decrease from 2.46eV to 1.75eV with Fe added in the sample studied by exploiting ultraviolet-visible spectroscopy (UV-Vis). The magnetization increases with the addition of an applied magnetic field and Fe contents. The dielectric parameters, permeability, impedance, and AC resistivity have been extracted from the measurement of the Impedance Analyzer. As band gap energy decreases, the compositions can be good candidates for memory devices. Low magnetization can make these compositions a good choice for spintronics, memory devices, and catalysis.