Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs

•Compact model of nanowire/nanosheet gate-all-around MOSFETs with quantum effects in focus.•Surface potential-based modeling formulations with energy quantization to characterize staircase behavior of capacitance.•Compact model implementation with Verilog-A, and compatible with circuit simulators for designs.•Model accuracy, scalability and convergence verified against numerical simulations as well as Si data.