LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices

Single-event burnout and single-event leakage current behavior of 1200 V and 3300 V silicon carbide power devices are analyzed based on heavy-ion irradiation tests. Both single-event burnout (SEB) and single-event leakage current (SELC) degradation thresholds are improved in the 3300 V devices by at least 300 V compared to the 1200 V devices. Additionally, it was demonstrated that the measured SEB threshold is a strong function of the device bias and irradiation history, and that bias and irradiation steps at intermediate voltages between the charge collection region and SEB region can result in parametric failure from accumulated leakage current rather than catastrophic failure by burnout.