Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs
IEEE ELECTRON DEVICE LETTERS(2024)
关键词
Logic gates,MODFETs,HEMTs,Wide band gap semiconductors,Aluminum gallium nitride,Inverters,Threshold voltage,GaN HEMT,p-NiO,E-mode,E/D integrated circuits,power ICs
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