Demonstration of 1200-V E-mode GaN-on-Sapphire Power Transistor with Low Dynamic ON-Resistance Based on Active Passivation Technique
IEEE Electron Device Letters(2023)
摘要
This letter demonstrates a 1200-V E-mode GaN-on-sapphire power transistor based on active passivation technique. The active passivation concept utilizes a thin p-GaN layer extending from the p-GaN gate towards near the drain to screen the surface traps. The fabricated active-passivation HEMT (AP-HEMT) with
L
GD
of 27 μm exhibits a low
R
ON
of 16.9 Ω∙mm, corresponding to a specific
R
ON
(
R
ON,SP
) of 6.42 mΩ·cm
2
. A breakdown voltage (
BV
) over 2000 V is obtained for the AP-HEMT. Besides, the AP-HEMT showcased excellent dynamic performance due to the surface shielding effect provided by the active passivation. Dynamic ON-resistance was characterized 120 μs after a 10-ms
V
DS
-OFF stress. At
V
DS-OFF
= 1200 V, the ratio of dynamic
R
ON
to static
R
ON
is 1.09. The results highlight the superior capabilities of active passivation technique for 1200-V GaN power transistors.
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关键词
E-mode,p-GaN gate,dynamic RON,breakdown voltage,active passivation
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