GaN Power Integration Technology and Its Future Prospects
IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)
Abstract
The planar nature of the GaN heterojunction devices provides extended dimensions for implementing monolithic power integrated circuits. This article presents a comprehensive review of the advancements in GaN power integration. Basic building blocks in a power integration platform based on p-GaN gate HEMT technology are discussed, including high-and low-voltage transistors, lateral field-effect rectifiers, resistors, and capacitors. Exemplary designs of monolithic gate driving circuit and detection/protection circuits based on this platform are demonstrated. Technologies to address other challenges, including the lack of mature complementary logic (CL) and the substrate-induced crosstalk effect, are also demonstrated. More forward-looking development of power integration based on wide bandgap semiconductors is also presented in a hybrid GaN/SiC field-effect transistor that is expected to harness the complementary merits of GaN and SiC, and ON-chip GaN-based nonvolatile memory device that could provide versatile intelligence.
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Key words
Logic gates,HEMTs,Power transistors,Transistors,Integrated circuits,Capacitors,Gate drivers,CMOS,crosstalk,driver,GaN,power integration
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