Effect of Electron Irradiation and Defect Analysis of -Ga₂O₃ Schottky Barrier Diodes

The effects of 1 MeV electron irradiation on beta-Ga2O3 Schottky barrier diodes (SBDs) were studied in this work. After an electron irradiation fluence of 1x10(16)cm(-2), the forward turn-on voltage of beta-Ga2O3SBD decreased from 0.82 to 0.77 V, the reverse current at-100 V decreased by 79%, the height of the Schottky barrier decreased from 1.01 to 0.92 eV, and the ideality factor increased from 1.04 to 1.13, indicating that the electrical characteristics of the beta-Ga2O3SBD had degraded. Through C-V testing, a carrier removal rate of 7.9 cm(-1)wasdetermined. The deep-level transient spectroscopy (DLTS)results showed that the concentration of native defects at the E-C-0.75 position increased sharply after irradiation, which may be the main reason for the degradation of the beta-Ga2O3SBD performance. The research results reveal th eimpact of high-energy electron irradiation on the beta-Ga2O3SBD, providing a basis for its application in harsh radiation environments.