Electrospinning-Driven High-Performance Aligned Nanowires-Based Field-Effect Transistors for Integrated Electronics

Nanowire (NW)-based field-effect transistors (FETs) are an important constituent element in future nano-integrated circuits, which are also competitive for multifunctional-type device applications. However, suffering from a disordered fiber distribution system and the influence of deficiencies in regular oxide channel materials, the electrical properties of NWs-based transistors could not be unleashed and balanced. In this study, aligned Hf-doped InZnO (a-IHZO) NWs were prepared by electrospinning technology and assembled into FETs. Taking advantage of the strong oxygen binding capacity of Hf and the modulation of charge density, the a-IHZO/SiO $_{\text{2}}$ FETs with an appropriate NW density achieved a high saturation mobility ( $\mu _{\text{SAT}}\text{)}$ of 26.8 cm $<^>{\text{2}}$ /V $\cdot$ s and high stability while maintaining the balance of all electrical parameters. By utilizing the Al $_{\text{2}}$ O $_{\text{3}}$ dielectric layer, the FET's $\mu _{\text{SAT}}$ is significantly improved by $>$ 2 $\times$ and high gain has been achieved in a low-voltage-driving logic device. These indicate that the a-IHZO architecture may be useful for the future development of low-dimensional, high-performance, application-oriented integrated electronics.