Self-powered response in β-In2S3 thin films

The development a of highly efficient self-powered photodetector is a critical area of research for optoelectronic applications and the Internet of Things (IoT). In2S3 thin films grown using the spray pyrolysis technique were used rto develop self-powered photodetectors. The structural, optical, morphological, elemental, compositional and electrical characterization of the thin films were carried out for optimization. The device structure “F:SnO2/ In2S3/Ag” optimized in this work, exhibited a self-powered photo-responsivity of ∼3.18 × 10−3AW−1, detectivity of ∼ 4.02 × 1010 Jones, and photosensitivity of ∼1.77 × 104 %. For our optimized device structure, an onset time delay between illumination with light and exhibition of photoconduction was observed, which could be modeled to the effect of traps in the In2S3 system. We demonstrate the ability to switch the self-powered response ON/OFF in our optimized device structure using an external bias voltage presenting an opportunity for developing artificially intelligent photodetectors.