Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source

This study focuses on modeling and analyzing a multi-wavelength (MW) ultraviolet light-emitting diode (UV LED) equipped with grading transition layers, which holds potential as a versatile and artificial UV light source. Commencing with the exploration of simple dual and triple-wavelength UV LEDs, we delve into the device mechanism, including the role of the grading transition layer and the control of emission intensity ratios. The grading transition layer connects modules with different emission wavelengths, effectively enhancing hole injection by diminishing the effective hole barrier and providing three-dimensional hole gas (3DHG). Besides, the emission intensity ratio of different modules is modulated through electron overflow, which is finely and coarsely controlled respectively by altering the quantum well number and the Al composition of electron controlling layers (ECLs). Modulating the ECL composition and quantum well number has good unilaterality facilitated by using grading transition layers, promoting a lower overall design complexity. Band diagrams, current dynamics, and carrier concentration distribution are analyzed to uncover various device mechanisms. After investigating dual-wavelength and triplewavelength LEDs, a broadband UV LED is designed and demonstrated through the numerical method. The LED incorporates five emission modules, and each module has a similar emission intensity, contributing to a near 100 nm width UV spectrum. We expect this work lays the foundation for MW and broadband UV LED designs, fostering advancements in the AlGaN-based UV LED community.