Ferroelectric diode-like resistive switching behavior in Bi0.95Er0.05FeO3/CuFe2O4 heterostructures for non-volatile memories

Di Li,Wenlong Liu, Jin Zong, Jiahua Wei, Shuxian Liu,Guoqiang Tan,Qibin Yuan,Dinghan Liu,Ao Xia,Haibo Yang

Applied Materials Today（2024）

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摘要

•The RRAM devices with 'p-n' and 'p-n-p' junction-like are proposed.•Excellent ferroelectric diode-like resistive switching behavior is observed in BEFO/CFO heterostructures.•The variation of the barrier width and height realizes the conversion between the HRS/LRS.•This work holds promise for non-volatile memory and logic devices.

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关键词

BiFeO3,Thin film,Resistive switching,Ferroelectric

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