Radiophotoluminescence properties of Bi-doped NaCaBO3

Tomoya Nakamura,Go Okada,Hidehito Nanto

JOURNAL OF ALLOYS AND COMPOUNDS(2024)

引用 0|浏览1
暂无评分
摘要
Bi-doped NaCaBO3 exhibits radiophotoluminescence (RPL) properties, where the Bi2+ centre is formed through X-ray irradiation. As a result of RPL, a broad emission band appears around 800 nm in the photoluminescence (PL) spectrum, attributed to X-ray irradiation. The intensity of the PL signal is proportional to the irradiation dose, making it useful for measuring accumulated radiation dose. The sensitivity depends on the doping concentration of Bi, and the optimal concentration to maximize sensitivity is approximately 0.005%. With a laboratory-constructed reader system, the optimal sample enables measurement of X-ray dose as low as 25 mGy. Following irradiation, the Bi2+ signal slightly increases by about 13%, but it is significantly reduced to around 7% of the initial value after heat treatment at 500 degrees C for 100 s. The formation and annihilation of the Bi2+ centre can be reproduced multiple times. Therefore, RPL of Bi-doped NaCaBO3 is attractive for radiation dosimetry applications.
更多
查看译文
关键词
Radiophotoluminescence,RPL,Bi,NaCaBO3,Radiation measurement
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要