Ga, Mg, F ternary-doped ZnO-based transparent conductive film prepared by radio-frequency sputtering with high transmittance

Ga/Mg/F ternary -doped ZnO transparent conductive films were prepared by radio -frequency (RF) magnetron sputtering. The influences of RF power, work pressure, and substrate temperature on the films are studied. The electrical and optical properties, structure and surface morphology of the films are discussed. Compared to other doped systems, the deposited films in this work exhibit excellent electrical and optical properties (p: 4.79 x 10-4 dlcm, T: 91.4%), which is comparable to commercial ITO. Besides, the films with the best performance show good stability. Our work has verified the advantages of triple -doped ZnO transparent conductive films, which is meaningful for future research and applications.