A Novel and Simple Way of Characterizing Gate Oxide Reliability of SiC MOSFETs

The penetration pace of SiC devices in power conversions cannot be quickened without thorough investigation on reliability of the new semiconductors. The issue of threshold voltage drifting, resulting from gate oxide defects, is considered as a major concern. While HTGB testing is used as a standard approach for assessing and screening SiC MOSFETs, proper technique is needed to simultaneously monitoring and characterizing status of the devices. In this paper, a simple way of performing HTGB test and, at the same time, characterizing threshold voltage drifting of SiC MOSFETs with online and instant data collecting is proposed. Experimental setup was built to prove and demonstrate the new approach.