Design of High-Performance Temperature Sensor Based on Planar 4H-SiC Junction Barrier Schottky Diode

In this work, a differential temperature sensor based on 4HSiC lateral Junction Barrier Schottky diodes (LJBS) has been designed for high operating temperature range of 293K-573K. The device parameters have been optimized to achieve high sensitivity and linearity of the temperature sensor. The impact of the device parameters on the sensor's performance has been analyzed. Finally, the performance of the temperature sensor has been evaluated. A high sensitivity of 5.78 mV/K and linearity of 0.998 have been achieved for a bias current of ID=0.4mA and a device ratio of 40