Research on the flexible phase change memory devices based on Ge2Sb2Te5/Mg35Sb65 superlattice-like thin films

In this paper, the flexible phase change behavior of Ge2Sb2Te5/Mg35Sb65 superlattice-like memory based on PEEK substrate is investigated in detail. The flexible memory has good thermal stability (Tc ∼270.4 °C), resistance to bending (more than 2 ×104 bending times), low resistance drift (less than 25% of the Ge2Sb2Te5 film), stable amorphous to crystalline resistance ratio (∼2 orders of magnitude) and ultra-fast information access speed (∼5 ns). Bending refines the grain of the film and widens the band gap. This study provides a potential option for flexible information storage electronics.