Temperature-dependent capacitance-voltage characteristics of β-Ga2O3 Schottky barrier diodes with (001) epitaxial grown layer using MOCVD

We investigate the thin film quality of the epitaxial layer on Sn-doped (001)-oriented β-Ga2O3 single crystal substrates. The homoepitaxial layer is grown by metal organic chemical vapor deposition (MOCVD) at 700 °C, 800 °C, 900 °C, and 1000 °C. To evaluate the grown epitaxial layer at different temperatures, the depletion layer of the Schottky barrier diode (SBD) is studied using the impedance-phase angle (Z-theta) via capacitance-voltage measurements. In addition, the Z-theta value is correlated with X-ray diffraction and transmission electron microscopy. The results show that the epitaxial layer grown at 900 °C has the best epitaxial layer quality. It is presumed that Z-theta measurements are a feasible and reliable approach to evaluate the epitaxial layer in Ga2O3-related devices.