Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?
ADVANCED ELECTRONIC MATERIALS（2024）
Key words
amorphous oxide semiconductor (AOS),bias stress,low-frequency noise (LFN),subgap density of states (DOS),thin-film transistors (TFTs)
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