A 200-V Half-Bridge Monolithic GaN Power IC With High-Speed Level Shifter and TEXPRESERVE0 Noise Immunity Enhancement Structure

Benefiting from the gallium nitride (GaN) monolithic process, a half-bridge power IC can fully unlock the high-speed capabilities of GaN devices by integrating drive circuits and power switches on the same die. However, the high operating frequency of the GaN system puts forward higher requirements on the delay and reliability of the level shifter, which serves as the key component for the half-bridge power IC. This work develops a 200-V half-bridge monolithic GaN power IC, adopting an efficient and concise level-shifting solution to mitigate the adversely affecting on speed caused by the absence of p-type devices in GaN processes. In addition, this design includes a noise immunity enhancement structure, which eliminates dV(S)/dt noise without compromising response time. The proposed GaN power IC has been implemented on a 1- mu m GaN-on-silicon process, and experimental results have already been performed to verify its outstanding characteristics.