Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD

Nearly stoichiometric (high P/Ga ratio and low oxygen content) - 20 nm GaP epi-layers were conformally deposited on the side-walls of InGaP layers using an atomic H ALD process with triethyl gallium (TEGa) and tritertiary butyl phosphine (tri-TBP). The key for uniform nucleation is an in-situ tri-TBP dry-clean in 40 mTorr Ar and 160 mTorr H2 without acidic wet-clean to generate a particle-free and damage-free InGaP surface which induces local epitaxy growth of homogeneous GaP thin films. The in-situ tri-TBP dry-clean removed the native oxide of InGaP, surface particles, and the residual impurities simultaneously. It is hypothesized that the key to the process is in-situ formation of PHx(C4H9)y surface adsorbates from atomic H and tri-TBP surface reactions. Insitu AES, cross-sectional STEM image, ex-situ XPS, AFM, and EDS confirmed the formation of high-quality GaP thin films on InGaP/GaAs with a high-quality interface and smooth surface morphology.