Research on Multi-Region Compensation Plasma Device

Conventional solid-state plasma devices encounter limitations in terms of the concentration and distribution uniformity of solid-state plasma, which adversely affects their microwave characteristics and overall antenna system performance. In this study, we propose a novel heterogeneous SPIN diode with multi-region compensation effects aimed at addressing this challenge. By incorporating SiGe regions within the intrinsic region of the device, we enhance the carrier injection ratio, effectively compensating for the rapid attenuation of solid-state plasma. As a result, a high-concentration and uniformly distributed solid-state plasma region is achieved within the SPIN diode, surpassing a concentration threshold of 1 x 1018 cm-3 within the intrinsic region. Through extensive simulations utilizing Sentaurus TCAD software, we demonstrate notable improvements in plasma concentration, distribution uniformity, and other key electrical parameters compared to traditional devices. The presented findings mark significant advancements in the realm of silicon-based plasma devices and hold promise for reconfigurable antenna systems.