Dependence of the Electrical Behavior of an Indium-Gallium-Zinc Oxide Thin-Film Transistor on the Process Condition of Plasma-Based Fluorination
IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)
摘要
Fluorination is known to have beneficial effects on the electrical behavior of a metal-oxide thin-film transistor (TFT). These include a positive shift of the turn-on voltage and a higher resistance against thermally, hydrogen-incorporation, or bias-stress-induced parameter drift. Hitherto there is a scarcity of reports on the dependence of the effectiveness of plasma-based fluorination on its process condition. It is presently shown that the effectiveness improves with a higher fluorination temperature but degrades upon exposure to a postfluorination oxidizing atmosphere.
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关键词
Air exposure,indium-gallium-zinc oxide (IGZO),plasma fluorination,thin-film transistor (TFT)
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