Reverse Blocking Enhancement-Mode AlGaN/GaN HEMTs with Hybrid p-GaN Ohmic Drain on the Si Substrates

Hybrid p-GaN Ohmic drain reverse blocking high electron mobility transistors (RB-HEMTs) and conventional p-GaN Enhancement-mode (E-mode) HEMTs are designed and fabricated on the Si substrates. Compared with the conventional p-GaN HEMT, the RB-HEMT can achieve great reverse blocking capability. The forward and reverse blocking voltages of the RB-HEMT are 1116 V and 1056 V and the turn-on voltage of the device is 1.07 V. When the temperature rises from 25 degrees C to 150 degrees C, the turn-on voltage of the RB-HEMT increases from 1.07V to 1.10 V, and the Vth increases from 1.97V to 2.07 V. The difference in turn-on voltage and threshold voltage is mainly due to the different metals in contact between the gate and drain electrodes and p-GaN. The reverse leakage current of the RB-HEMT is 1.16 x 10-1 mA mm-1 when the temperature is 150 degrees C, which still keep good reverse blocking ability at high temperatures. Hybrid p-GaN Ohmic drain reverse blocking high electron mobility transistors (RB-HEMTs) are designed and fabricated on the Si substrates. The forward and reverse blocking voltages of the RB-HEMT are 1116 and 1056 V, respectively, and the turn-on voltage of the device is 1.07 V.image (c) 2023 WILEY-VCH GmbH