Low-temperature homoepitaxial growth of -Ga₂O₃ thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique

Low-temperature homoepitaxial growth of beta-Ga2O3 (-201) has been successfully demonstrated by the atmospheric pressure plasma-enhanced chemical vapor deposition technique. To search for low-temperature growth, temperature-dependent studies were carried out between 350 and 600 degrees C. A high N-2 gas flow rate, low gallium source concentration, and high oxygen flow rate ratio played key roles in growing independent and homogeneous multiple nuclei of Ga2O3 , leading to three-dimensional grain growth mode, single crystallinity, and the highest growth rate of -0.17 mu m/h at 350 degrees C. The highly reactive atmospheric pressure oxygen plasma actively led to epitaxial growth. The low thermal budget homoepitaxial growth is a record reduction reported thus far.(c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/5.0178100