High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials（2023）

引用 0|浏览0

暂无评分

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

High-performance CMOS inverter based on MoTe &lt;sub&gt;2&lt;/sub&gt;-FETs &lt;sub&gt; &lt;/sub&gt;achieved &lt;sub&gt; &lt;/sub&gt;by contact doping and channel encapsulation