Exploring the Impact of Implant Temperature and a Novel Aluminum Ion Source on the Electrical Performance of 4H-SiC PiN Diodes

This work compares the electrical performance of 4H-SiC PiN diodes fabricated using various P+ ion implantation conditions. For optimal device electrical performance, the use of high temperature implantation is necessary for high energy and high dose implants to achieve full lattice damage recovery. Furthermore, a new Aluminum (Al) ion source is introduced, significantly improving ion beam current, reducing beam glitches, and increasing source lifetime. It is noteworthy that the new ion source unintentionally introduces a small fraction of Chlorine (Cl) doping to the Al implants. The electrical performance of the fabricated PiN diodes using this new ion source is also examined to validate its effectiveness and understand the impact of Cl on device performance. Preliminary electrical results indicate that the use of the new ion source has no discernible effect on the static electrical performance of the fabricated diodes.