The Effect of Cryogenic Temperature on Subthreshold Hysteresis of Commercial SiC Power MOSFETs

This work explores the effect of cryogenic temperature on the subthreshold hysteresis for commercially available 1.2kV SiC Planar and Trench MOSFETs. With the reduction in temperature, planar devices show a significant increase in hysteresis, whereas trench devices show the opposite trend. For a particular temperature, the subthreshold slope has been found to be significantly shifted for trench devices in comparison to room temperature, whereas no change in slope has been observed in planar devices. The underlying mechanism has been investigated and presented in this work.