Comparison of the static characteristics of GaN HEMTs with different gate technologies and the impact on modeling

This paper comprehensively studies the impact of different gate technologies on the static characteristics of GaNHEMTs by comparing three transistors: 1) a GaN-on-SiC transistor fabricated by Ferdinand-Braun-Institut, which has an Ir-based Schottky gate, 2) a GaN-on-Si transistor from GaN Systems with a Schottky contact p-GaN gate and 3) a GaN-on-Si Gate Injection Transistor (GIT) from Infineon with an ohmic contact p-GaN gate. These three types of GaN transistors are further compared with a SiC-MOSFET and a Si-MOSFET. In addition, the impact of different gate technologies on modeling is studied.