Fourier-IR Spectroscopy of Photoresist/Silicon Structures for Explosive Lithography

Photoresist (PR) NFR 016D4 films deposited on the surface of silicon (Si) wafers by centrifugation were studied by attenuated total internal reflection Fourier-IR spectroscopy. Background absorption of the PR/Si structures was observed to increase at wave numbers <1600 cm −1 because of the effect of electromagnetic radiation on the Si substrate and scattering/reflection at the PR/Si interface. Asymmetry in the force field of the aromatic ring in the NFR 016D4 film was detected. Spectral features of thick PR NFR 016D4 films were due to the presence of residual solvent. Formaldehyde formed by fragmentation of hydroxymethyl residues in the phenol-formaldehyde resin was detected in irradiated films. Radiation-induced processes in PR NFR 016D4 films at doses up to 2∙10 15 cm −2 involved mainly residual solvent molecules or by-products of PR film synthesis.